Abstract
In this paper an experimental and theoretical analysis of the characteristics of MOS transistors in saturation is presented. The experimental study of the drain current and output resistance brought to light a hitherto undescribed property of the product ( R D . I D ) 2. Based on this property a model is developed in which the channel is assumed to be divided into two regions. This model enables one, by means of a simple algorithmic calculation, to simulate the dependence of the drain current or of the output resistance as a function of the bias voltages. The continuity of these characteristics with those provided by the approximation of the gradual region is ensured. The experimental methods of determining the parameters acting on the saturation resisrance, as well as their main properties, are described.
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