Abstract
Thin p-clad (250 nm) InGaAs quantum well (QW) lasers with 200 nm p +-GaAs cap layer thickness and various device configurations are studied. For wide stripe ( w=50 μm) lasers, abnormal lasing characteristics of very high thresholds, current on-time dependent lasing and micro-second long delays are observed. With 300 nm ridge-height, micro-second long lasing delays are found in w=6 μm lasers, and Q-switching in w=2.5 μm and 3.5 μm lasers, respectively. The unusual lasing behaviors are attributed to the decrease of transverse optical confinement caused by the increase of p +-GaAs cap layer thickness. To improve device performance and eliminate lasing delay, p +-GaAs cap layer thickness of wide stripe lasers and stripe width of narrow stripe devices have to be not greater than 170 nm and 1.5 μm, respectively, in thin p-clad (250 nm) laser structure.
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