Abstract
ABSTRACT The purpose of this paper is to attempt to find a plausible solution for a high density FRAM (Ferroelectric Random Access Memory). To complete this, firstly, we give a very brief but an important review of how FRAM technologies have been evolved during the past many years. Secondly, not only are a few examples demonstrated in terms of how a FRAM-embedded system is advantageous when adopted in a system but it is also put forward how FRAM can play an essential role in a fusion memory. Finally, several process technologies for integrating a reliable high-density FRAM are mentioned, accordingly resulting in very reliable cell-charge populations after full integration, along with wafer-level reliabilities.
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