A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime

Abstract

In Part I we presented the first physics-based analytical model that unifies the descriptions of majority and minority carrier mobility and that includes screening of the impurities by charge carriers, electron-hole scattering and clustering of impurities. Here the model is extended to include the full temperature dependence of both majority and minority carrier mobility. Based on our model and experimental data on the minority carrier diffusion length as a function of temperature, the temperature dependence of the carrier lifetime is determined. The model is especially suited for device simulation purposes, because the carrier mobility is given as an analytical function of the donor, acceptor, electron and hole concentrations and of the temperature.