Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry

Abstract

In this work the photocarrier radiometric (PCR) technique has been used to determine the temperature dependence of carrier mobility and bulk lifetime in Si wafers. The noncontact, nonintrusive, and local monitoring nature of PCR surpasses the present available techniques for measuring carrier mobility. The results showed that the lifetime increases with temperature as T 1,6 and the temperature dependence of carrier mobility is μ (T) T -2.5 cm 2 /Vs.