Abstract
A physics-based analytical model is presented that unifies the descriptions of majority and minority carrier mobility and that includes screening of the impurities by charge carriers, electron-hole scattering, clustering of impurities, and the full temperature dependence of both majority and minority carrier mobility. The electron and hole mobilities are given as analytical functions of local variables: ionized donor, ionized acceptor, electron and hole concentrations, and the temperature. The excellent agreement between the proposed model and published experimental data on the carrier mobility in silicon reinforces the model predictions on less investigated aspects of the mobility, e.g. the temperature dependence of the minority carrier mobility, which is distinctly different from that of the majority carrier mobility. >
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