A thorough investigation of the degradation induced by hot-carrier injection in deep submicron N- and P-channel partially and fully depleted unibond and SIMOX MOSFETs

Abstract

A thorough investigation of hot-carrier effects in deep submicron N- and P-channel SOI MOSFET's is reported in this paper. First, a comparison of device aging among three types of SOI devices fabricated by various technologies is shown. The carrier type, the quality of oxides, and the device structure are key parameters for the degradation mechanisms in these devices. On the other hand, the worst-case aging (V/sub d/=V/sub t/,V/sub d//2 or V/sub d/) also depends on these device distinctions. For fully depleted SOI MOSFETs, the variation of the main electrical parameters is determined with and without the influence of defects in the buried oxide. The device lifetime of NMOS/SOI in the worst-case condition is carefully predicted using accurate methods that take into account the degradation saturation and the region of defect creation (Si/SiO/sub 2/ interface and/or oxide volume). Finally, an investigation of the aging/recovery mechanisms is carried out in P-channel SOI MOSFETs under an alternating stress.