A suggested nanoscale partially depleted SOI-MOSFET (PDSOI) by built-in tunneling diodes- improvement on short channel effects and frequency features

Abstract

This paper describes a new modified structure based on partially depleted silicon-on-insulator (PDSOI) MOSFETs with built-in tunneling diodes inside the buried oxide. This action will change the electric field and create a new path for the accumulated holes to be evacuated. Hence, the floating body effect (FBE), which is a very harmful event, is successfully controlled by these built-in diodes. The diodes will be formed by inserting N+ and P+ doping regions inside the buried oxide, which will provide both vertical and lateral holes for current tunneling through the channel region. Furthermore, with the introduction of the tunneling diode inside the buried oxide, the effective thermal conduction of the proposed device increases, eventually resulting in a reduction of the self-heating effect. Two parameters in the cases of reduced self-heating effect and FBE gave the suggested structure a potent capability to gain further figure of merits in the terms of subthreshold swing, leakage current, ION/IOFF, drain-induced barrier lowering (DIBL), power gains, drain-source conductance, cut-off frequency, and minimum noise figure. The device has been simulated by the ATLAS tools from the SILVACO family and compared with the conventional structure. All the obtained results displayed the privilege of the proposed device as compared to the common device.