A Study on 4H-SiC LIGBT with Dual Emitter for High Voltage Driver IC

Abstract

This paper describes a lateral insulated gate bipolar transistor (LIGBT) with dual emitter structure in 4H-silicon carbide (4H-SiC). The electrical characteristics of the dual-emitter LIGBT are better than those of the conventional 4H-SiC LIGBT. The dual-emitter structure has an additional emitter between the emitter and the collector in the conventional LIGBT structure. The addition of the emitter can significantly improve forward voltage drop, on-resistance and current driving characteristics. Experimental results show that the 4H-SiC dual-emitter LIGBT has lower forward voltage drop, lower on-resistance and a higher current driving capability than the conventional 4H-SiC LIGBT.