Abstract
Minority carrier lifetime is an efficient indicator of defect levels present in the starting material as well as process and equipment induced defects. By employing rapid thermal processing (RTP) and rapid photothermal processing (RPP) as the thermal processing techniques, we have studied the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the bulk minority carrier lifetime of phosphorous doped and undoped single crystal silicon wafers. For both diffused and undiffused wafers, we have observed an enhancement in the minority carrier lifetime when UV and VUV photons are used in conjunction with the samples processed without the use of UV and VUV photons. The effect of ramp rates on the minority carrier lifetime and the significance of optimized thermal cycles have also been studied in this paper. A possible explanation based on the dependence of diffusion coefficient on the photo spectrum of light source is also given in this paper.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
