Abstract
A new simple and accurate model for device speed is proposed for the first time in Double-Gate SOI MOSFETs. Simulation studies are done with physical and electrical parameters. Experimental results are compared with the results predicted by the analytical model and good agreement is seen. A record maximum value of transconductance in DG-SOI MOSFETs is achieved (1350ms/mm at Lg=0.05μm and Tsi=50nm). It has been observed analytically that device speed higher than 1×107cm/s is possible in DG-SOI MOSFETs at a lower silicon thickness and substrate concentration at Lg≤0.35μm by appropriate modelling of parameters.
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