Abstract
A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-Ⅳ type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resistance and device capacitance in DM DG FD SOI MOSFET is carried out with Pearson-Ⅳ type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. These parameters are categorically derived keeping view of potential at the center (φ<SUB>c</SUB>) of the double gate SOI MOSFET as it is more sensitive than the potential at the surface (φ<SUB>s</SUB>). The proposed structure is such that the work function of the gate material (both sides) near the source is higher than the one near the drain. This work demonstrates the benefits of high performance proposed structure over their single material gate counterparts. The results predicted by the model are compared with those obtained by 2D device simulator ATLAS to verify the accuracy of the proposed model.
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