Abstract
In this paper, a novel nanoscale SiGe-on-insulator (SGOI) metal oxide-semiconductor field-effect transistor (MOSFET) is presented by amended channel band energy. The main idea in this work is to improve the electrical parameters by altering the channel band energy. Vertical graded Ge composition profile is utilized in the channel. Therefore, the proposed structure is named VGC-SGOI. The electrical performances of the VGC-SGOI are analyzed via a 2-D numerical simulation and the results are compared with characteristics of a uniform germanium composition SGOI (UC-SGOI) structure. Due to increment in the potential barriers and the slope of conduction/valence band by employing the vertical graded Ge composition profile, the VGC-SGOI has lower leakage current and higher saturation drain current in comparison with the UC-SGOI. Furthermore, the proposed structure suppresses short channel effects (SCEs) and drain induced barrier lowering (DIBL). Consequently, the VGC-SGOI has a superior candidate for high performance devices.
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