A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures

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In this paper the reverse gated-diode technique is examined for determining the carrier generation lifetime and surface generation velocities in thin-film silicon-on-insulator (SOI) devices. Using the modeling of the gate-controlled volume and surface generation components, SOI-specific aspects of the technique are highlighted. A reliable approach for extracting generation parameters in thin-film SOI devices from reverse gated-diode measurements is proposed and validated for high temperatures. The technique is demonstrated on the devices fabricated on two different SOI materials (zone-melt recrystallized and Unibond®), as examples of volume- and surface-dominated generation current behaviors. Finally, the technique is applied to characterize Unibond® SOI devices operating in the temperature range 100–300 °C to demonstrate the model and technique applicability at high temperatures.