Abstract
We have built an infrared light scattering tomography (LST) apparatus where the sensor is a linear array of silicon charge coupled device detectors. We demonstrate the use of this system to produce LST images from which quantitative information can be extracted. Samples of semi-insulating (SI) LEC GaAs quenched from different temperatures have been analyzed using this equipment. The apparatus is also useful in performing Infrared transmission measurements to map EL2 concentrations in similar material. We compare data obtained using the new apparatus with that obtained by conventional EL2 imaging.
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