Abstract
We present a practical procedure for the evaluation of the Fermi energy in semi-insulating (SI)GaAs from electrical measurements. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near-infrared absorption measurements, to SI GaAs. Employing this procedure, we showed that the EL2 concentration in Czochralski-grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p-type crystals) rather than abruptly as previously proposed.
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