Abstract
This paper mainly proposes a novel current-voltage characteristic model of silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) for achieving significant amount of drain current performance. First, drain current characteristics is performed for increasing gate-source voltage with variable mobility and channel length circumstances. Then I-V characteristics of SiC MOSFET are compared and evaluated for different operating states i.e. cut-off, linear and saturation. Later, drain current is characterized with varying the transconductance. Finally the drain current is simulated for the proposed novel method and it is with that of existing method. From the simulated performance, it is obvious that the performance in terms of drain current increases significantly for the novel model than that of the existing model.
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