A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters

Abstract

A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet ) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature characteristics. The non-segmented equations and the parameter-extraction method for the proposed SiC mosfet PSpice model are introduced first. Simulation and experiment results are given to verify the correctness of the model while considering the temperature-dependent parameters. The static characteristics of the model are verified by comparing the simulation curves with the static characteristic curves in the SiC mosfet 's datasheet, and its dynamic characteristics are verified by comparing the simulation results with experimental results under different ambient temperatures (25, 75, and 125 °C) based on a double-pulse test platform. Moreover, the proposed non-segmented model, the conventional segmented model, and the model from the manufacturer are adopted and simulated in a full-bridge inverter. The simulation results show better convergence of the proposed non-segmented model. Therefore, an accurate and practical simulation model of SiC mosfet is provided for circuit design in this paper.