Abstract
To solve the simulation convergence problem of Silicon Carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) models, this paper proposes a non-segmented model for SiC MOSFETs, which uses non-segmented, smooth continuous equations to describe the static and dynamic characteristics of SiC MOSFET. Further, the static characteristic of SiC MOSFET obtained by the non-segmented model is verified by comparing the simulation curves with the static curves provided in datasheet, and the dynamic characteristic is verified by comparing the simulation rise time and fall time of voltage with the datasheet based on the double pulse simulation circuit. The accuracy and good convergence of non-segmented model provide a good way to research the power converters with SiC MOSFETs by simulation way.
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