Abstract
Different configurations of Fe-doped TiO2 thin films deposited on both quartz glass and heavily doped p-type silicon substrates were prepared by the sol–gel method. Oxygen-sensing properties of the TiO2 thin films were measured through the variations in resistivity under a low operating temperature of 300 °C using a micro-current instrument. Extraordinary oxygen sensitivity up to about 200 times of resistance ratio appeared only in the configuration of TiO2 thin film deposited on the heavy doped p-type silicon substrate with Fe doping of 4–6 mol %, in which the rutile phase content was maximum. The high oxygen sensitivity was induced by the extrinsic positive charge gained and was controlled by both the rutile phase content in the thin film and the positive charge transmitted from the heavily doped p-type single crystal silicon to the thin film.
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