A Novel Approach to Silicon‐Nanowire‐Assisted Growth of High‐Purity, Single‐Crystalline β‐Si3N4 Nanowires

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AbstractBundles of single‐crystalline β‐Si3N4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)‐assisted growth. The β‐Si3N4 NWs obtained have a small diameter of ∼30 nm, a single‐crystalline structure with [100] or [101] direction, and a thin oxide shell. The photoluminescence and Raman scattering spectra confirm the good crystalline structure. The weak blue‐shift of the peaks in Raman scattering compared to bulk β‐Si3N4 is attributed to the phonon confinement effect or laser heating during the measurements. Finally, a possible SiNWs template‐assisted growth model is suggested.