Abstract
An efficient method for extracting the small-signal model parameters of an HBT transistor is proposed. The strong correlation between the extrinsic and intrinsic HBT model parameters, which can be employed to drastically reduce the search space, is exploited. For the first time in HBT modeling, an explicit equation of the total extrinsic elements, which results in a reduction of the number of unknowns for optimization, is derived. This novel approach can yield a good fit between measured and simulated S-parameters. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 278–282, 2001.
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