Survey on designing a CAD model for GaN HEMT based on measurements

Abstract

A survey on various method of extracting small signal and large signal models parameters for GaN HEMT is presented. Small signal parameters are calculated from measured s-parameters, and a large signal model is derived by introducing additional nonlinear lumped elements to the small signal model. The transistor model is analyzed as the complex of the extrinsic and intrinsic model. Intrinsic parameters are evaluated by measuring s-parameters of the biased transistor while extrinsic parameters are evaluated without applying any gate bias. Small-signal parameters are then recalculated from obtained s-parameters.