Abstract
A simple and efficient way of extracting the small-signal model parameters of the heterojunction bipolar transistor (HBT) is proposed. This novel approach provides a new insight into the strong correlation between the extrinsic and intrinsic HBT model parameters and raises the optimization efficiency by drastically reducing the search space. For the first time in HBT modeling, an explicit equation on the total extrinsic elements is derived, which results in a reduction of the number of optimization variables. The simulation results are presented and it is shown that this new method can yield a good fit between measured and simulated S parameters. © 2002 Wiley Periodicals, Inc. Int J RF and Microwave CAE 12: 311–319, 2002. Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mmce.10001
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