Abstract
Based on the exact resultant solution of two dimensional Poisson's equation, a novel two-dimensional model including surface channel potential, subthreshold swing, and threshold voltage for asymmetrical dual gate material double-gate (ADMDG) MOSFET's have been developed. The model is verified by the simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance of ADMDG MOSFET's.
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