A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

Abstract

On the basis of the exact resultant solution of two dimensional Poisson's equations, a new accurate two-dimensional analytical model comprising surface channel potentials, a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator. Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.