Abstract
On the basis of resultant solution of two dimensional Poisson's equation, a new two-dimensional model including channel potential, threshold voltage, and subthreshold swing for the dual material surrounding-gate (DMSG) MOSFETs is successfully developed. The model is verified by the simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance for the DMSG MOSFET's.
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