A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET’s

Te-Kuang Chiang

doi:10.1016/j.microrel.2009.05.006

A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET’s

Te-Kuang Chiang

https://doi.org/10.1016/j.microrel.2009.05.006

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Journal: Microelectronics Reliability	Publication Date: Jun 12, 2009
Citations: 15

Affiliation: National University of Kaohsiung

#Subthreshold Behavior Model #Double-gate MOSFET + Show 8 more

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Abstract

Based on the exact solution of two-dimensional Poisson’s equation, a novel subthreshold behavior model comprising channel potential, subthreshold swing, and threshold voltage for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET’s have been developed. The model is verified by its simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance for the ADMDG MOSFET’s.

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