Abstract
Multilevel structures consisting of alternating metal and dielectric layers are necessary to achieve interconnection in high density or VLSI (very large scale integration) circuits using either MOS or bipolar technology. Polyimide is one of the excellent high temperature heat-resistant polymers in organic materials and has good planarization capability and electrical insulating properties. In this work, following the synthesis of DAPDS (4,4'-bis (3-aminophenoxy)diphenyl sulfone), by nucleophilic aromatic substitution of 4,4'-dichlorodiphenyl sulfone with m-aminophenol, DAPDS/pyromellitic dianhydride based soluble and processable fully imidized polyimide was synthesized successfully by using solution imidization technique. Using this specific polyimide, a metal-polyimide-silicon MIS (metal polyimide silicon) structure was manufactured. Electrical properties of the MIS capacitance have been examined. The planarizing and patterning characteristics and electrical characteristics such as current vs. voltage, breakdown field strength, permittivity and capacitance vs. voltage for quasi-static and high frequency measurements are discussed. The results are compared with conventional dielectric films used in integrated circuit fabrication.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Dielectrics and Electrical Insulation
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
