Additive effects under the series of EOS in space application VLSI circuits

Nikolai Diatlov,Konstantin Epifantsev,Petr Skorobogatov,V Borikov,V Ivanova,S Uchaikin,A Ignatovskaya,P Baranov,A Dolgih

doi:10.1051/matecconf/201710201012

Nikolai Diatlov, Konstantin Epifantsev + Show 7 more

Open Access

https://doi.org/10.1051/matecconf/201710201012

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Abstract

One of the problems of space technology is the spacecraft on orbit charging effect. Series of EOS (electrical overstress) are caused by internal charging affect VLSI (very large-scale integrated) circuits, which may lead to its damage. The results of the EOS series with energy below the threshold of failure for modern submicron VLSI circuits design are presented. The obtained results confirm the possibility of accumulation of the effects of damage from exposure of EOS series in modern VLSI circuits and allow you to get the dependence describing the additive nature of damage the VLSI circuits during exposure to subthreshold EOS. The obtained dependence agrees well with the Arrhenius equation, which indicates the thermal nature of the damage under the series of subthreshold energy EOS. The method of the VLSI circuits testing is proposed to determine the level of the VLSI circuits EOS hardness to the effects of multiple different pulsing voltages.

Highlights

The space industry has currently faced the problem of the spacecraft lifetime
When the electric field strength exceeds the critical electrical discharge occurs between the parts of the spacecraft, which can lead to malfunctions and damages of sensitive electronics of the spacecraft
It follows that for VLSI circuits experiencing during operation a large number of EOS effects, critical voltage amplitude UCR may be substantially below the threshold of failure when exposed to a single EOS pulse

Summary

Introduction

The charging effect of the spacecraft is caused by exposure to a flow of charged particles near-Earth plasma, the solar wind, galactic radiation and light. Different parts of the spacecraft accumulate charge unevenly as a result of its non-uniform irradiation and the use of different materials in the structure. Over time, it has formed between the parts defined potential difference, and electrostatic forces act. When the electric field strength exceeds the critical (for near-Earth space plasma Emax ~ 107 V/m) electrical discharge occurs between the parts of the spacecraft, which can lead to malfunctions and damages of sensitive electronics of the spacecraft

Results

Discussion

Conclusion