Abstract
This paper presents a new method to design high efficiency and wideband power amplifier (PA). Based on the output parasitics network of MOSFET, this method shifts the optimum load impedances from the intrinsic plane to the package plane, which are obtained by the continuous PA theory and then rectified elaborately by multi-harmonic bilateral-pull technology, in order to make the second harmonic load impedances in high efficient region as well as the fundamental load impedances with high power added efficiency (PAE) and output power. A simulated example based on the GaN HEMT device CGH40010F is designed to verify the proposed method.
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