Abstract
In this article, simulation and implementation of a 30 watt high efficient class-AB RF pulse power amplifier using GaN transistor in 1.2–1.4 GHz is presented. Class-AB RF amplifier is widely used in wireless communication industry due to acceptable compromise between linearity and efficiency. Load pull utility provided in Agilent Design System software is employed to obtain the optimum load impedance while the input of the transistor is matched with S 11 conjugate to attain an acceptable power gain. Afterwards, microstrip tapered lines are employed for the design of input and the output matching networks to provide required band width. The power amplifier exhibits (45–44.8) dBm output power at 1 dB gain compression point (P1dB), 17 dB minimum signal gain and above 63.6% power added efficiency throughout the band. The measurement results show that the amplifier is very suitable for use in the driver stage of a very high power amplifier due to its high gain flatness.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
