Abstract
A two-stage power amplifier (PA) using GaN HEMTs is presented with a high power added efficiency (PAE) and good linearity. This PA employs a structure of a class-C PA driving a class-AB PA to obtain a high PAE while maintaining the linearity. Source-pull and load-pull techniques were implemented to achieve optimum output impedance and inter-stage matching condition to compromise the PAE and the linearity of the overall circuit. When producing a two-tone carrier-to-intermodulation (C/I) ratio of 30 dB with the 1 MHz space, the two-stage PA exhibits a maximum PAE of 47% with an output power of 3 W at 3.7 GHz. The PA provides a maximum output power of 7 W with the gain of 15.8 dB.
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