Abstract
A new gate current measurement method is proposed for the characterization of hot-carrier induced degradation in MOSFETs. This method requires a much shorter measurement time to obtain the I g- V g curve of the MOSFETs as compared to the conventional floating-gate technique, and therefore has a lower risk of degrading the test device during the measurement process. This paper also discusses the appropriateness of using a high-frequency (100 kHz–1 MHz) measurement to obtain the gate capacitance of MOSFETs when applying the floating-gate technique to obtain the device gate current.
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