Abstract
In this paper we report the results of a photoluminescence study of Ga(Al)As isotype double-heterostructures (DH). It is shown that the maximum photoluminescence efficiency is achieved with a small but finite level of oxygen in the reactor. We also demonstrate that incorporating a “getter-buffer” layer in a normal (Ga(Al)As double heterostructure has advantages in terms of reproductibility from run to run.
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