Epitaxial growth of InSb on semi-insulating GaAs by low pressure MOCVD

Abstract

InSb layer was grown on SI GaAs by low pressure (1/20 atm) MOCVD using TMIn and TMSb. Optimal growth temperature range for mirror surface growth was very narrow, 440–460°C. The growth rate (∼ 0.7 μm/h: P(TMIn)= 0.5 Pa) did not depend on the TMSb/TMIn ratio from 10 to 100. The crystal planes near the interface were very diffusely oriented and their orientation converged rapidly to a (100) GaAs substrate orientation with thickness.