Abstract
InSb heteroepitaxial films have been grown on GaAs by low-pressure(LP) MOCVD and the structural and electrical properties, thereof have been investigated. For 1.5–2.0 microm thick InSb heteroepitaxial films, the FWHM of the DCRC ranges from 420 to 894 arcsec and the 77 K electron Hall mobilities are inversely proportional to the square of the rocking-curve width. This result suggests that the electron mobility is limited to the scattering by dislocations. The scattering by the charged dislocations explains the mobility-temperature characteristics of the film having larger rocking-curve width.
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