Abstract
A field dependent mobility model for use in quasi-unidimensional numerical analysis of JG FET is proposed. This model takes into account the electrical data (mobility and diffusion laws vs electric field) obtained on Si bulk material, the technological data given by the manufacturer (geometry of the mask) and the assumption of an isotropic diffusion of the gates. The static and the dynamic behaviour of the JG FET is obtained. The validity of the present model is demonstrated using very different geometrical JG FET structures. Reasonable agreement is found between calculated and experimental results up to the saturation range.
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