A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st/7th generation 1200V/650V chipset for UPS and PV inverter application

Marco Honsberg,Akiko Goto,Eric R Motto

doi:10.1109/epe.2015.7309215

A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st/7th generation 1200V/650V chipset for UPS and PV inverter application

Marco Honsberg, Akiko Goto + Show 1 more

https://doi.org/10.1109/epe.2015.7309215

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Publication Date: Sep 1, 2015

Citations: 1

Affiliation: Mitsubishi Electric (Japan), Mitsubishi Electric (Germany)

#PV Inverter Application #Low Internal Inductance + Show 8 more

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Abstract

Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications.

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