Low inductance, explosion robust IGBT modules in high power inverter applications

Abstract

Inverters in the MW class can greatly benefit from the use of IGBT modules with low internal inductance and with resistance to the effects of catastrophic explosions. The flat low inductance package (FLIP(R)) technology enables production of high power IGBT modules from 1800 A, 1800 V to 1200 A, 3300 V with an internal inductance as low as 3 nH. This represents an improvement of a factor of 2 compared to conventional modules at this power level. This is particularly important in high current, fast switching applications in order to minimize voltage overshoots during turn on and turn off and therefore to reduce the voltage overhead needed in silicon for a given DC link voltage. In addition, the FLIP(R)'s new terminal arrangement enables an improved high power inverter construction, which results in a total parasitic inductance of only 40 nH for an inverter in the MW range. An additional problem with the application of high power inverters in the MW range is the behaviour of the packaging under catastrophic failure conditions. Typically, failure of conventional modules can result in particles being emitted from the module, which involves risk of busbar shorts and causes significant mechanical damage to the busbar structures and gate circuitry. The FLIP(R) packaging is designed to avoid emission of metal parts under such conditions, which will limit mechanical damage and make repair less costly and time consuming.