Abstract
The gate voltage oscillations in IGBT modules under short circuit conditions were investigated. In IGBT modules containing two chips in parallel, the amplitudes of the gate voltage oscillations were considerably larger than those in modules with single chip configurations. To investigate the gate voltage oscillations, a small signal analysis was performed on parallel circuits containing two IGBT chips. The gate voltage oscillations in parallel chips configurations could be described by a feedback amplifier model. The results of this analysis showed that a high resistive impedance between the gates of the two chips in parallel and a low inductance between their emitters were effective in suppressing the gate voltage oscillations. These effects were confirmed by experiments.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
