Abstract
A formalism is developed to compute the oxygen depth profiles obtained after high dose implantation into silicon. The volume swelling due to silicon oxidation, the migration of unbonded oxygen and surface sputtering are taken into account. For the implantation of 50 keV O + ions up to doses of 1.3 × 10 18 cm -2, a comparison of calculated profiles with Rutherford backscattering spectrometry results gives reasonable confirmation of the model.
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