Abstract
The surface properties such as depth profile, chemical bond and structure, and electrical properties of oxide and nitride layers in aluminium produced by high dose implantation of oxygen and nitrogen ions were investigated. High doses of oxygen (4 × 10 18 ions cm −2) and nitrogen (2 × 10 18 ions cm −2) molecule ions were implanted into polycrystalline and single-crystal aluminium sheets using low current densities of 150 keV at room temperature. The implanted layers were characterized by means of Auger electron spectroscopy, X-ray photoelectron spectroscopy, X-ray and transmission electron diffraction, transmission electron microscopy and IR spectroscopy. The electrical resistivity and breakdown electric field strength of oxide and nitride layers were measured by current-voltage characteristics. It was found that high dose oxygen ion implantation produces microcrystalline γ-Al 2O 3, whereas implanted nitrogen leads to polycrystalline or single-crystal AlN layers at room temperature without any thermal annealing. It is possible to form electrically insulating layers in aluminium using this technique.
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