A model for negative bias temperature instability (NBTI) in oxide and high /spl kappa/ pFETs 13/spl times/-C6D8C7F5F2

S Zafar,Tak Ning Tak Ning,J Stathis,B.H Lee,A Callegari

doi:10.1109/vlsit.2004.1345483

A model for negative bias temperature instability (NBTI) in oxide and high /spl kappa/ pFETs 13/spl times/-C6D8C7F5F2

S Zafar, Tak Ning Tak Ning + Show 3 more

https://doi.org/10.1109/vlsit.2004.1345483

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Publication Date: Jan 1, 2004

Citations: 18

Affiliation: IBM Research - Thomas J. Watson Research Center

#Negative Bias Temperature Instability #Spl Kappa + Show 8 more

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Abstract

A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO/sub 2//Si interface and its two distinguishing features are: application of statistical mechanics to calculate depassivated site density increase and the assumption that the hydrogen diffusion is dispersive. The model is verified using new and published NBTI data for SiO/sub 2//poly, SiON/W and HfO/sub 2//W pFETs. A comparison between high /spl kappa/ and conventional oxide is made.

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