Abstract
Negative bias temperature instability (NBTI) of p-MOSFETs gets recovered immediately when the stress is removed, and hence the electrical measurement will tend to underestimate the NBTI degradation due to its unavoidable measurement time. This measurement-induced additional NBTI recovery must also be taken into account, especially during the NBTI recovery process, because it directly affects the time frames. In this work, by using different measurement time interval during the electrical characterization, this repeatable NBTI recovery phenomenon is used to extract the critical measurement time. Thereafter, with the modulated time interval, a novel empirical model for longer-time NBTI recovery is also proposed here so as to describe the entire NBTI recovery process together with previous short-time limited empirical model.
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