Abstract
A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si interface and its two distinguishing features are: application of statistical mechanics to calculate de-passivated site density increase as a function of stressing conditions and the assumption that the hydrogen diffusion in oxide is dispersive. The model is verified using published NBTI data for SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /poly, SiON/W and HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /W pFETs. A comparison between high κ and conventional oxide is made.
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