Abstract
In this study, we proposed a miniaturization technique for a differential RF CMOS low-noise amplifier (LNA). The inductors of the input matching network and for the source degeneration are magnetically coupled to minimize the area for the inductors. By adapting this technique in a CMOS LNA, the parasitic resistance induced by both the input and the source degeneration inductors is reduced, improving the noise figure and gain of the amplifier. To verify the feasibility of the proposed technique, we designed the 2.4-GHz differential LNA using 0.13-µm RF CMOS technology. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1836–1838, 2014
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