Abstract
Heterojunctions formed with CuInTe 2 have been examined by a range of microbeam analytical techniques. The junctions studied were n-CdS/p-CuInTe 2 and n-Si/p-CuInTe 2. The p-Si/n-CdS heterojunction has also been studied. Microstructural studies of thin films of CuInTe 2 in a scanning transmission electron microscope under the conditions prevailing during heterojunction formation have been made. X-ray microanalysis depth profile studies have been used to determine the degree of cross-diffusion at the heterojunctions. Electron beam induced conductivity (EBIC) in the scanning electron microscope has been used to measure minority carrier diffusion lenghts in each heterojunction.
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