Abstract
Properties of PECVD deposited a-SiGe: H films have been improved controlling the chamber pressure, flow rates and hydrogen dilution of SiH 4 + GeH 4. Photoconductivities of the films have increased considerably when deposited at slow rates. But for Ge-rich films with band gap < 1.5 eV low deposition rate as well as hydrogen dilution of the gas mixture is necessary to improve the quality.
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