Abstract
The diffusion of silver in amorphous chalcogenides is the basis for high-resolution lithographic applications. Previous studies of the diffusion of silver on contact with chalcogenide films has been studied by Auger depth profiling and the effects of photodoping on chemical bonding have been studied by x-ray photoelectron spectroscopy. Electron lithographic effects have been studied in the transmission electron microscope.The objective of the investigation described here has been to determine the degree of diffusion of silver in the amorphous chalcogenides, As2S3, As2Se3, GeS and GeSe when these films are in contact with thin silver films. The silver distribution has been determined by x-ray microanalysis of film cross-sections in the scanning electron microscope (SEM). Electron beam induced conductivity (EBIC) at points in these films has also been investigated.
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